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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
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Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
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Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
![Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0022309398000222-gr4.gif)
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
![Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.1c00632/asset/images/large/el1c00632_0002.jpeg)
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
![Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces](https://pubs.acs.org/cms/10.1021/acsami.9b07819/asset/images/large/am-2019-07819z_0005.jpeg)
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
![Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.1c00632/asset/images/large/el1c00632_0005.jpeg)
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing)
![Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0022309398000222-gr1.gif)
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
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